Flash memory

Flash memory has appeared in 1994. It has a low power consumption, small size, large capacity, and provides compatibility with personal computers.

Flash memory has appeared in 1994

Flash memory is a chip reprogrammable read-only memory (EPROM) with an unlimited number of write cycles. Flash memory uses a new recording and reading the principle that is different from that used in conventional circuits PROM. Crystal flash memory circuit is composed of three layers. Middle layer having a thickness of about 1,5 nm, made of a ferroelectric material. Two outer plates are matrix conductors for applying a voltage to the middle layer. When voltage at the intersection of the conductors, a voltage sufficient to change the direction of the magnetic moment of atoms in its crystal lattice located under a crossing point of conductors. The direction of the magnetic field is maintained even after removal of the external electric field. Changing the direction of the magnetic field changes the resistance of the ferroelectric layer of the site. When reading at one outermost layer is energized, and the second layer is measured by a voltage passed through the ferroelectric. It will have a different meaning for areas with different directions of the magnetic moment. This flash memory is called FRAM (ferroelectric random access memory).

Structurally, the flash memory is performed in a separate block containing the flash memory in the form of a chip and the controller to connect to one of the standard computer input. Flash memory has different dimensions and structural design. Currently in the flash memory can record several tens GB. write and read speed up dozens of MB/s.

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